View RB215T-90_1300706.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

RB215T-90
Diodes
Schottky barrier diode
RB215T-90
Applications General rectification (Common cathode dual chip) External dimensions (Unit : mm)
4.50.3 0.1 10.00.3 0.1 2.80.2 0.1
Structure
1.2 1.3
5.00.2
Features 1) Small power mold type. (PMDU) 2) Low IR 3) High reliability
8.00.2 12.00.2
Construction Silicon epitaxial planar
0.8 (1) (2) (3) 0.70.1 0.05 2.60.5
ROHM : O220FN Manufacture Date
Absolute maximum ratings (Ta=25C) Parameter
13.5MIN
15.00.4 0.2 8.0
Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz1cyc) (*1) Junction temperature Storage temperature (*1)Tc=100max Per chip : Io/2
Electrical characteristic (Ta=25C) Parameter Symbol
Symbol VRM VR Io IFSM Tj Tstg
Limits 90 90 20 100 150 -40 to +150
Unit V V A A
Forward characteristics Reverse characteristics Thermal impedance
VF IR jc
Min. -
Typ. -
Max. 0.75 400 1.75
Unit V A /W
Conditions IF=10A VR=90V junction to case
1/3
RB215T-90
Diodes
Electrical characteristic curves
100
FORWARD CURRENT:IF(mA)
1000000 100000
REVERSE CURRENT:IR(uA)
Ta=150 Ta=125 Ta=75
10000 f=1MHz
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
10
Ta=150 Ta=125
10000 1000 100 10 1 0.1
1000
1 Ta=75 0.1
Ta=25
100
Ta=-25
Ta=25
Ta=-25
10
0.01
0 100 200 300 400 500 600 700 800 900 1000
1 0 10 20 30 40 50 60 70 80 90 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 0 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30
FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS
720
FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA)
300
Ta=25 IF=10A n=30pcs
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
710 700 690 680 670
VF DISPERSION MAP
250 200 150 100 50 0
AVE:46.0uA
Ta=25 VR=90V n=30pcs
1300 1290 1280 1270 1260 1250 1240 1230 1220 1210 1200 AVE:1257.3pF Ta=25 f=1MHz VR=0V n=10pcs
AVE:692.7mV
IR DISPERSION MAP
Ct DISPERSION MAP
300
PEAK SURGE FORWARD CURRENT:IFSM(A)
30
Ifsm 1cyc 8.3ms
1000
PEAK SURGE FORWARD CURRENT:IFSM(A)
250 200 150 100 50 0
RESERVE RECOVERY TIME:trr(ns)
25 20 AVE:21.6ns 15 10 5 0
Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs
Ifsm 8.3ms 8.3ms 1cyc
100
10
AVE:168.0A
1 1 10
NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS
100
IFSM DISRESION MAP
trr DISPERSION MAP
1000
TRANSIENT THAERMAL IMPEDANCE:Rth (/W) PEAK SURGE FORWARD CURRENT:IFSM(A)
Ifsm t
100
IM=100mA IF=10A
50 40
DC D=1/2
10
Rth(j-a)
300us
FORWARD POWER DISSIPATION:Pf(W)
1ms
time
30 20 10
Sin(180)
100
1
Rth(j-c)
10 1 10
TIME:t(s) IFSM-t CHARACTERISTICS
100
0.1 0.001
0 0.1 10 1000 0 10
TIME:t(s) Rth-t CHARACTERISTICS
20 30 40 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS
50
2/3
RB215T-90
Diodes
30 80 80
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
70 60 50 40 30 20 10 0 Sin(180) 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta) D=1/2 DC
70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc() Derating Curve(Io-Tc) Sin(180) DC D=1/2
REVERSE POWER DISSIPATION:PR (W)
20 DC D=1/2 10 Sin(180)
0 0 10 20 30 40 50 60 70 80 90 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS
30
ELECTROSTATIC DISCHARGE TEST ESD(KV)
25 20 15 10 5 0 AVE:11.6kV C=200pF R=0
No break at 30kV
C=100pF R=1.5k
ESD DISPERSION MAP
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1

▲Up To Search▲

Price & Availability of RB215T-90

	To Download RB215T-90 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .